No, you can't. Cu will quickly by oxidized in PECVD chamber.
And you will find Cu/SiN cracked and peels off.

> Yes. You can. SiN layer can be used as Cu diffusion layer.
>
> ----- Original Message -----
> *From:* "Xiaoding wei" 
> *To:* mems-talk@memsnet.org
> *Sent:* 04 April 2006 03:46:34
> *Subject:* [mems-talk] Growing SiN on copper film using PECVD?
>
>
>> Hi, Does anyone know if I can grow a SiN layer on copper film using
>> PECVD method?
>
>