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MEMSnet Home: MEMS-Talk: Cu will be oxidized Re: Growing SiN on copper filmusing PECVD?
Growing SiN on copper film using PECVD?
2006-04-04
Xiaoding wei
2006-04-19
K A Chan
Cu will be oxidized Re: Growing SiN on copper film using PECVD?
2006-04-23
[email protected]
Cu will be oxidized Re: Growing SiN on copper filmusing PECVD?
2006-04-24
Glenn Silveira
2006-04-25
K A Chan
Cu will be oxidized Re: Growing SiN on copper film using PECVD?
2006-04-26
[email protected]
Cu will be oxidized Re: Growing SiN on copper filmusing PECVD?
Glenn Silveira
2006-04-24
Xiaoding,
You can deposit a thin oxide than the Nitride
Best Regards,

Glenn

-----Original Message-----
From: [email protected] [mailto:[email protected]]
Sent: Sunday, April 23, 2006 4:11 PM
To: [email protected]
Subject: [mems-talk] Cu will be oxidized Re: Growing SiN on copper
filmusing PECVD?

No, you can't. Cu will quickly by oxidized in PECVD chamber.
And you will find Cu/SiN cracked and peels off.

> Yes. You can. SiN layer can be used as Cu diffusion layer.
reply
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