Hi there,



I searched and found some information on RIE of fused silica wafer, but
would like to ask you guys again.



CF4 = 25 sccm, O2 = 5 sccm, P = 100W at 13.56 MHz, p = 60 mtorr, etching
rate = 41 nm/min. The driven electrode

area is about 900 cm.



I need comments and suggestions because our fused silica inventory is
limited... thanks a lot!