Hello all,

after I anneal my sample (silicon substrate, Ti/Au=10/60 nm )
at around 550 oC in H2/N2=10/90%, the Au looks like melted.

I know there is a eutectic point for Au/Si, but Ti is between two layers.
when I increased the thickness of Ti to 50 nm. looks better, but it is
still not good enough(I can not wire bonder on the Au).

I read some papers claims they did anneal on the similar samples like me.
I do not know what's wrong.

any information is welcome.

best

Yu Chen