Hi,

I have a step in my RIE process where photoresist (S1813) is ion milled. This
causes burned fences all around the patterns on the wafer which are really hard
to remove. I read that you could try to RIE with O2 and then put the wafer in a
Nanostrip solution (piranha) but that will attack Al which I have on my wafer...

Does anyone know about a process to get rid of the burned resist?

Thank you,

Martin Aguilar
McGill NanoFab