Hello,

We are making plans to set up an ITO deposition
system, and have decided to either sputter an ITO
target, or reactively sputter an In/Sn target in a
Ar/O2 plasma (assuming In/Sn mixed at the right
ratio).

I assume sputtering an ITO target might be easier to
control and more repeatable, but I don't know for
sure.  Does anyone else know?  Is there any reason to
prefer one method over the other?

Thank you for your insight.

regards,
Aaron Glatzer