Hi everybody,

We are using the XM8 DC sputtering machine to deposit diffusion barrier
(tantalum nitride) and seed layer (copper) into blind vias which are 20-um
diameter, 100-um deep. Although the taper is large enough (compared to other
projects), we still don't have conformal seed layer near the bottom of the via.
The sputtering power for TaN is 2500W, for Cu is 3000W and the pressure is
5mTorr.

Does anyone have any idea how I can adjust these parameters to get better
deposition?

Thanks a lot,
Trang