Dear Mr. kim,
The normal method for thick films of nitride with stress control is PECVD with
SiH4 and NH3 with dual frequency. A LPCVD reactor will give stoichiometric film
that uses SiH2Cl2 and NH3 (RI 2.0). However, the rate of deposition is low.
I am no aware of equipment using SiF4 as Si precursor although such reaction may
be possible
regards
vsbhat
Quoting K Saw :

> Dear Bhat,
>
> Thanks for your comments. I read in a journal that one way is to use SiCl4 +
> NH3. Any chance of using SiF4 + NH3?
>