Hi, Isaac

For my case, the thickness is 15 um. I am using hard contact mode and Cr
mask. I am sure that the profile in mask is very sharp. What I am trying
to do is process 6 um hole array with space of 20 um.

Do you calculate the dose of print like this? For my MA8 aligner, the
H-line is 405 nm and 10 mw/cm2, so for 1600 mw/cm2 I shall expose 160 s.
Is it correct?

My softbake time is too long if you compare with the recommended recipe
of AZ P4620. Do you think it is proper?

Best regards!

XiaoQiang



To: General MEMS discussion
Subject: Re: [mems-talk] the dose of print for AZ P4620

XiaoQiang,

Is the recommended dose rated at the resist thickness you use? If your
resist is thicker than the rated setting, you need more dose. If the
rated
dose is for i-line or g-line only, it is not very useful for your
broadband exposure because your dose is contributed from 350-500nm,
although peaked at 356, 405, and 436nm. Did you set the intensity
control
on Ch1 (365nm i-line) or Ch2 (405nm h-line)? Do you use contact or
proximity exposure? For contact exposure, the intensity profile should
be
sharp. For proximity exposure, did you leave the gap too wide? Do your
photomask patterns have sharp or transition edges (Cr mask vs. emulsion
mask)? If you mask patterns are not sharp, your intensity profile is not
sharp as well.

Regards,

Isaac