Richard, you are facing a lot of troubles. 8 um of oxide will have a lot
of stress. You can combine three methods of oxide formation.
1. thermal oxidatin followed by polysilicon deposition, oxidation of poly,
perhaps repeat these steps with poly and finish it with LP (PE) CVD oxide
deposition. We made some 6 um of oxide before using these techniques.
There is not many cases when you really need such a thick oxide. Are you
sure you need it? Good luck.
Pavel



On Wed, 20 May 1998, Richard A. Brown wrote:

> Does anyone know where I can get ~8 microns of SiO2 deposited on
> some 4" wafers ?
>
> (We could do it here by LPCVD, but with 3% silane it would take a very
> long time...  Spin-on glass is certainly an option, but for these wafers
> I'd prefer to avoid it.)
>
> Thanks in advance,
>
> - r.
>