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MEMSnet Home: MEMS-Talk: Refractive Index of Photoresists
Refractive Index of Photoresists
2007-02-09
Martyn Gadsdon
2007-02-09
Robert Black
2007-02-12
mohendra roy
2007-02-09
Bill Moffat
2007-02-09
Roger Shile
2007-02-13
Bill Moffat
2007-02-11
Shay Kaplan
Refractive Index of Photoresists
Shay Kaplan
2007-02-11
Hi Martyn,
If my memory doesn't fail me, novolac based positive resist index changes
from ~1.63 to about 1.67 after exposure, or at least it used to be that way
in 1983

shay

-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]
On Behalf Of Martyn Gadsdon
Sent: Friday, February 09, 2007 4:20 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] Refractive Index of Photoresists

Dear All,

I am interested in finding out what the difference in refractive index is
between un-exposed (with uv radiation) and exposed photoresist. Particularly
I am interested in knowing what photoresist (or other substance that can be
applied by spinning) will give me the most difference in refractive index
between exposed and unexposed areas.
reply
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