Thermal SiO2

- dry oxidation               up to 450 nm

- wet  oxidation             450 nm -2600 nm

Thermal SiO2

- dry oxidation               up to 450 nm

   T = 800 °C to 1100 °C

          2Si + O2  ---> 2 SiO2

               HCl adition for enhanced oxide quality



- wet  oxidation             450 nm -2600 nm

                                     for thick oxide only!

    T = 800 °C to 1100 °C

          Si + 2H2O ---> SiO2 + H2



A DSC IS USED FOR LPCVD NITRIDE

THNAKS

 naitbouda abdelyamine

anaitbouda@cdta.dz