Dear all,

Using e-beam lithography I defined with tri-layer approach (PMMA 950K in Ethyl
lactate/Copolymer 33% in 1-methoxy-2-propanol/PMMA50K in Ethyl lactate) 100nm
T-Gate on silicon.After gold evaporation, I have a very good T shape, but It's
impossible to remove resist using lift-off.After gold evaporation resist slope
is modified.We tried hot acetone for 30min, with bad results.The problem of
resist removal is not dependent from T-shape,or solvent penetration because we
tried to repeat resist wet etching on a cross section with same results.Resist
after evaporation seems deeply modified.

Can you suggest a solution?

Which temperature is achieved on resist during metal evaporation?

Noemi