Hi,
Can anyone tell me what is an effective way to do lift-off with resist AZ5214E?
I have tried the following process
1.  Spin coat AZ5214E at 5000rpm on SiO2 or SU-8 wfr
2.  Bake at 95'C for 1min
3.  Expose at 74.1mJ/cm2
4.  Develop in AZ Developer for 20s
5.  Evaporate 10nm Cr & 300nm Gold at a rate of 0.07-0.09nm/s.
6.  Lift-off using Acetone

I have discovered that lifting off with acetone is more effectively done with
ultrasonic treatment, but ultrasonic treatment is too harsh when the substrate
is SU-8 as cracks will result.
How about using AZ300 Resist stripper at 80-90'C or is there a better method?

Thanks!

Jeffrey