Dear Chad,

  Thank you for your reply. They say 0.8u PECVD oxide could withstand 160v and
SiO2 in SOI is mostly thermally grown. Will 100nm thmally grown oxide withstand
several tens of volts? Can the bonding proceed without making a gounding contact
if layer is thicker than 100nm?

  Sincerely yours,
Matthew King

---  Brubaker Chad  wrote:
  >SOI wafers can still anodically bond, although it is somewhat more difficult,
>depending on oxide thickness. If the oxide is thin you m ay be able to get
>away with simply increasing the voltage used.
>
>If the oxide is too thick, you'll probably need to make a grounding contact
>directly to the SOI surface - this is most easily accomplished by rotating a
flat >marked glass 90?away from the flat of the SOI, and making a grounding
>contact directly to the edge exposed at the flat of the glass.