Hello Peter,

We are using Karl Suss bonde 6BE for the Au Au
thermocompression bonding.

The bonding temperature is 400C for 1hr and 7500mbar
of pressure is applied on the wafers.

Good surface (O2 plasma cleaned), 2000A of Sio2 or TiW
should act as a good diffusion barrier between the
silicon and Au.

Thanks,
Kris