Zhang:

It takes a special plasma system to remove SU-8 as you describe. The system
needs to run oxygen and fluorine using a downstream+RIE configuration. Also
cooling of the wafer is important. Under the right process conditions you could
expect 6-10 micron/minute etch rate with no residues. If you want additional
information you can contact me directly. Bob Henderson 480-967-9333


-----Original Message-----
From: Zhang Xiao Qiang 
To: [email protected]
Sent: Wed, 13 Jun 2007 9:29 pm
Subject: [mems-talk] remove SU8 dry etching

Hi, Dear collegues
I would like to remove the  SU8 dry etching after electroplating. The
hickness is about 20 micron. Do you think it is feasible? Anyone like
hare your experience and recipe with me?