Dear all:
There is a problem for me to do the bonding with gold on the aluminum
metal film,and the substrate is GaAs, the top cap layers are:
CdMgTe,CdMnTe, CdHgTe,CdTe and ZnTe, respectively. The thickness of the
deposited Aluminum is 300nm,the radius of the gold wire is 25
micrometers. Is there anybody who can give a suggestion about this
bonding technology?
Thanks very much!
Chen,Yuansen
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Universität Duisburg-Essen-Standort Duisburg
Abteilung Elektro-und Informationstechnik
Werkstoffe der Elektrotechnik(WET)
Chen,Yuansen
BA 119
Bismarckstraße 81,47057 Duisburg,
Germany
Phone: +49 (0)203 379-3420 (Office)
+49 (0)176 6612 8085 (Mobile)
Fax: +49 (0)203 379 3404
mailto: [email protected]
http://www.uni-duisburg.de/FB9/WET/