Hi, Colleagues,
        I am interested in obtaining the dopant profile in Si. It's just normal
diffusion process of Phosphorus or Boron into opposite type Si substrate and
form a p-n junction. And I need to find out that dopant profiling -- usually is
within a couple of microns.
        I look into this subject a little bit and basically for low cost and
reliable methods there are  1. Electrochemical C-V      2. Spreading Resistance
3. SIMS.
       I know some of the pros and cons among them but since I have never done
depth profiling work before, I'm sure there are some tricks here and there.
       Can you comment on the pros and cons for measuring the dopant profiles of
the above mentioned p-n structure? The lowest resolution I can live with is huge
and is around 25nm. But the Si quality is not good with lot of defects, traps
etc. and the surface might be rough on the order of microns.

       Thanks!