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MEMSnet Home: MEMS-Talk: Silicon oxide depositon and etch problems
Silicon oxide depositon and etch problems
2007-09-17
deepa sree
2007-09-17
prabhu arumugam
2007-09-18
Chord Chen
2007-09-18
Edward Sebesta
2007-09-17
garber@engr.uconn.edu
2007-09-18
Jaibir sharma
2007-09-18
Qiao Dayong
Silicon oxide depositon and etch problems
garber@engr.uconn.edu
2007-09-17
I use SF6 to go through a TiO2/SiO2 layer stack (14 layers) with no problem
until I get to the last SiO2 later.  It is a soft layer of "I don't know
what".  DI water and a cotton swap has worked best so far but would like to
dry etch clean.  I use a Trion RIE also.  Anyone else like to comment?

Brent


Original Message:
-----------------
From: prabhu arumugam auprabhu@yahoo.com
Date: Mon, 17 Sep 2007 11:43:10 -0700 (PDT)
To: mems-talk@memsnet.org
Subject: Re: [mems-talk] Silicon oxide depositon and etch problems


Hello Deepa,
I am also planning to dry etch oxide (TEOS
deposition)in TRION system using CHF3 and O2. What
process setting you are using and what is your mask.
Is it a photoresist and what type. IF you get any info
from anyone else, please let me know.

reply
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