Hi,all

The HDMS is normally used to enhance the adhesion of PR by puting the
wafer in HDMS priming oven. Now, I plan to fabricate a hydrophilic
layer SiO2 patterned by PR. Therefore, the HDMS will be applied to
SiO2 first and then PR spin/exposure/develop. I am afraid the HDMS
will stay on SiO2 after its pattern and leave a hydrophobic layer on
SiO2. Is this true or not. If so, how to avoid or remove this layer?

I also want to pattern a OTS layer (which self-assembled on SiO2
surface) on SiO2. But if the HDMS stay on top of SiO2, will it
separate the OTS from touching with SiO2 and prevent its SAM reaction
with SiO2?

Thanks a lot!

Best regards,
Steven