Dear Friends,

I am trying to get eutectic bonding between two Si wafers, with Au/Cr
as an intermediate layer.
I am using AML bonder.

For the ease of visual inspection I am using one glass wafer with Cr/
Au and other Si wafer.

I am giving 400 degree centigrade temperature(as I read one should
give more than eutectic temperature, 363 degree centigrade is eutectic
temp for Si-Au.)

I observed, on quarter wafer, when 1200 N  platen force was given
reasonably good area(like almost 80 %) got bonded.

Can somebody mail me, exact what temperature and platen force I should
apply to get a good bond(99% to 100%)?

Thanks, AShwini