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MEMSnet Home: MEMS-Talk: How to uniformly etch ~0.05 - 0.3um off a 3" Si wafer?
How to uniformly etch ~0.05 - 0.3um off a 3" Si wafer?
2007-12-19
Dave Goldstein
2007-12-19
Edward Sebesta
How to uniformly etch ~0.05 - 0.3um off a 3" Si wafer?
2007-12-19
Andrea Mazzolari
How to uniformly etch ~0.05 - 0.3um off a 3" Si wafer?
2007-12-20
Dave Goldstein
2007-12-20
Andrea Mazzolari
2007-12-21
Kirt Williams
How to uniformly etch ~0.05 - 0.3um off a 3" Si wafer?
2007-12-21
Andrea Mazzolari
2007-12-21
mehmet@kimmonquartz.com
2007-12-27
Kvel Bergtatt
2008-01-18
Dave Goldstein
How to uniformly etch ~0.05 - 0.3um off a 3" Si wafer?
2008-01-18
Andrea Mazzolari
2008-01-20
Thomas Wolff (WEP)
2008-01-20
abdou sar
2008-01-22
Kvel Bergtatt
How to uniformly etch ~0.05 - 0.3um off a 3" Si wafer?
Andrea Mazzolari
2007-12-21
Hello Kirt,
this is an interesting suggestion, can you provide more details ?
Which is the quality of silicon surface after HF etch ? Is it possible to
obtain a DSP surface ?

I want to perform grinding and polishing, how is it possible to determine
depth of lattice damage induced with those operations ?

Best regards,
Andrea

> A trick I've seen used to remove surface damage from grinding and
> polishing
> is to grow a thermal oxide, then etch it off in an HF solution, say 5:1
> BHF.
> It's standard practice to perform a nitrogen anneal after oxidiation to
> recover some of the damage caused by oxide growth.
> The silicon thickness used to grow oxide is 46% of the oxide thickness;
> for
> example, a 0.22-um oxide consumes 0.1 um of silicon.
>     --Kirt Williams


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