Hi everyone,

I would like to deposit polysilicon onto SOG (which act as a sacrificial layer
and do planarization).
In order to have doped poly, it will go through ion implantation process which
annealing the whole structure. However it would damage at certain temperature.
What if i replace the SOG with BPSG, or cover the whole SOG with BPSG before
deposite the poly, is it ok with ion implantation annealing process?

What is the range of sheet resistance for doped poly with 3000A thickness (after
anneal)?

Hope to hear any comment and advice regarding this matter.

Thank you.

Hafizah