What kind of wafer preparation are you doing before the bonding process?

And how much applied force are you using?

What side is your cathode (silicon or glass)?

Dan

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of ShengYi Hsiao
Sent: Thursday, March 06, 2008 12:30 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] fialed in borofloat-si bonding?

Hi everybody.

Does anyone have experience in bonding borofloat glass to silicon wafer?
I am using recipe of 1000V and 400degree celcuse in vaccume environment,
however, after applying  that bonding condition for an hour, the glass
and the
wafer still not being bonded. Only same weak connection randomly
happened,
which results the  interfering pattern. The wafers can easily be
separated.
Does anyone know the bonding condition for borofloat glass and Si?

the FAIL experiment records are :

voltage : 1000V
temperature:  400C
pressure:  9mtorr
bonding: 1 hr
bonding current: 0.02mA (form starting to the end) ....WHY?
Charge: 0~6e-2 (form starting to the end)

Any help would be greatly appreciated.

Greetings,
IAN Hsiao.