Dear colleagues:
I am using EDP(ethylenediamine-pyrocathecol-water) to etch <100> silicon
but the uniformity is not good and I don't know how to control the etch
rate. Does any one like to tell me a typical composition for  EDP,
operating temperature and the relation between the etch rate and mol
concentration of each reagent. By the way, any one has the experience of
etching P++ silicon bridge out of the <100> N type silicon substrate
using EDP? Thanks in advance for any help.

--
Ma Bin
500, Chi Feng Road
Shanghai Institute of Technical Physics
The Chinese Academy of Sciences
Shanghai 200083
P.R.C.

Email: mabin@online.sh.cn