Hi,

I am required to deposit 2 um thick PZT by Edwards Auto500 Sputter Deposition.
The deposting rate now is incredibly low. Can anyone tell me the suitable
parameters I should use on this machine, so I can get a higher depositing rate,
and not ruining the target? Because there is photoresist on the wafer, high
temperature is not allowd. So after deposition, I have to remove photoresist
first, then do annealling. Does this affect later crystallization?And what
annealling process should I use to get a crystallized thin film?

Thank you very much.