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MEMSnet Home: MEMS-Talk: Photolithography - Resist peeling
Photolithography - Resist peeling
2008-08-15
madhav rao
2008-08-15
Abhishek Jain
2008-08-17
Suraj Patil
2008-08-15
rmartin@systron.com
2008-08-15
SEBESTA Edward
2008-08-15
Jon R. Fox
2008-08-15
Bill Moffat
2008-08-15
Andrea Mazzolari
2008-08-15
Bruce Neufeld
2008-08-16
Kvel Bergtatt
2008-08-16
Michael Larsson
2008-08-18
Michael Larsson
Photolithography - Resist peeling
Abhishek Jain
2008-08-15
Wht is the feature size of your pattern that is peeling off? If it is
less than 20um, it can be because of the mylar mask. I had this
problem before and figured out that if I use the chrome mask, the
patterns are fine, but small patterns peel off (and some other issues
like rough sidewalls) with mylar.

We have published in this regard.. take a look at

Jain A and Posner JD, Anal Chem, 2008, 80, 1691-

hope this is of some help

regards
-Abhishek Jain

On Fri, Aug 15, 2008 at 1:39 PM, madhav rao  wrote:
>
> Hi,
>       I am experiencing a problem in patterning on silicon-di-oxide wafers; I
am using SHIPLEY 1818 resist to get a thickness of 2.5 micron; 6 seconds of
exposure time. After developing for 60 seconds, I observe, the resist layer
peels off; leaving no patterns on the wafer. Also I had soft-baked the resist at
95 C for 2 minutes in hot-plate.
> This seems strange to me, as a month ago, I had successfully transferred the
patterns on to silicon-di-oxide wafers.
> I am using mylar film masks.
> Please let me know, if any one had experienced similar problems before; and if
so, could you let me know suggestions to solve ?
>
> Thanks
>
> Regards,
> Madhav Rao,
> Graduate student,
> University of Alabama.
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