We did a project with them applying 100um (!) thick oxide layer on top of
Silicon Carbide.

As a standard process we do up 10 - 30µm and – actually the most important
thing - can control the stresses of the deposited  layer. The process is an
modified e-beam deposition (as suggested by John) and it is reasonable fast.

It also would be possible to structure the layer as well (contact opening
etc.) – is this an requirement for you?

Dr. Juergen Leib
MSG Lithoglas AG
Gustav-Meyer-Allee 25
D13355  Berlin (Germany)
Main:     +49 30 46403-618
eMail:   Juergen.Leib@lithoglas.de
  www.lithoglas.de