If you are using a Novellus tool, there is a manual which gives you hints about
how to control  stress.  In general, higher %LF power gives a more compressive
stress, as do lower pressure, and lower ammonia/silane ratio.  You probably
should consider doing a designed experiment in case there are any unknown
interactions between these factors.

Good luck,

Charlie Whitman



lee ki seong  on 09/14/98
07:07:09 PM

Please respond to lee ki seong
      ; Please respond to
      mems-cc%[email protected]

To:   MEMS%[email protected]
cc:    (bcc: Charles Whitman/Lex/Lexmark)
bcc:  Charles Whitman/Lex/Lexmark
Subject:  A. low stress Si3N4 in PECVD ?




Hi. colleague

Is any body know how we can get low stress Si3N4 in PECVD using SiH4, NH3
   RF POWER, Temp, Pressure, Vacuum.

If some body has a trend to lessen the stress, would you inform me ?

with thanks.