Dear all,

I am trying to etch down bulk silicon up to 120 microns using DRIE. The
substrate is a bonded Si-Glass wafer consisting of patterned comb structures
on Silicon. I am experiencing etch lag on silicon due to microloading of
plasma. I would like to know if there is anyway we can overcome this
problem. I knew there were some works done earlier by depositing ITO on
glass. However, I would like to explore other options if any since my wafers
are already bonded. I would appreciate your suggestions in this regard

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Thanks & Regards,
Srini