hi friends

Actually I have successfully bonded silicon having 0.1micron oxide
with 0.5 mm glass wafer.

While studying the effect of glass thickness silicon wafer with
0.05micron oxide has been bonded upto 1.7mm glass.

2.0mm glass could not be bonded to such oxidized wafer. the voltage
applied was 1.4kV, but now I want to increase the temperature which
has been set to 400C for that I need the melting and softening point
of Corning #7740

thnx

On 2/16/09, Reza Rashidi  wrote:
> Hi,
>
> How thick were your oxide and glass in your experiment? How long did you
> spend for bonding and how did you control the energy you applied? Please
> give me more detail information.
> Thanks,