I think you need to describe a little more about the ICP process before
this question can be answered.  ICP (Inductively Coupled Plasmas) are
used for etching, plasma enhanced CVD and plasma emission spectrometers,
among other diverse applications.

Roger Shile

-Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of matthew king
Sent: Wednesday, February 18, 2009 5:50 PM
To: General MEMS discussion
Subject: [mems-talk] stress in bulk micromachining (ICP after anodic
bonding)

Dear all,

Has anybody tested the stress in bulk micromachining (ICP after anodic
bonding)? What's the magnitude of the stress?

While bonding induced stress is apparent (the bonded wafer is convex,
sometimes up to a hundred um), are ICP induced stress and doping induced
stress (0.01-0.02 Ohm.cm) significant? Bonding induced stress can be
isolated to some extent by anchor design.

In surface micromachining, foled beams are used to reduce the effect of
stress. Any other choice in structure design? Will some perforation do
it(say, near the two ends of the suspension beam)?

Thanks in advance.

Matthew King