Dear MEMS colleagues.

I am curious to find a way to monitor the etch rate of my sample inside an RIE
machine.
Now I have heard of CCDs (used for SEM), but I am not sure whether the plasma
inside the chamber and the gases would affect the CCD.
Does anybody know what would happen if a CCD is placed in plasma?

Regards.

Ghazal Hakemi
PhD student
Cranfield University
MK43 0AL   U.K.