On what basis do you make these suggestions?

Do you have first hand experience?

Thanks,

James

Jie Zou wrote:
> Try first less bias. then less RF power. then less SF6.
>
> On Tue, May 19, 2009 at 6:11 AM, shimul saha  wrote:
>
>> Hello,
>>
>> I am using BOSCH process for deep dry etching of silicon. The gases are SF6,
O2 during etching cycles and C4F8 during deposition cycles.. At present I am
getting slightly negative sidewall, but I want a positive sidewall. Can you
please provide any hint, probably changing gas ratio (incerase or decrease any
of the gas content) or power to get a positive sidewall in etching. Any
suggestions will be greatly helpful for me. Thanking you in advance.
>>
>> Best regards,
>> Shimul

--
Dr. James Paul Grant
Postdoctoral Research Associate
Microsystems Technology Group
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