Hello,

I would like to deposit silicon oxide layer in deep vias by PECVD TEOS
method (or any other low temperature process < 400 degree). Tool is Oxford
DP100

Via diameter is 50 um, and depth is 300 um. Deposition temp is 350
degree,power 30W, low frequency.

however i am not able to achieve conformal deposirtion in these vias,

Has anyone tried a similar method for insulation/barrier layer depositon?
Any way to solve this problem ?

It would be great if some one can share their experience in solving this
problem.

Thanks,
Pradeep