If I remember correctly, low concentration usually gives a faster etching rate,
but it comes with poor surface quality. hope this helps.



--- On Thu, 10/29/09, Jing Xiao  wrote:


From: Jing Xiao 
Subject: [mems-talk] silicon etching with KOH solution 10%
To: mems-talk@memsnet.org
Date: Thursday, October 29, 2009, 12:02 AM


Have you guys ever tried to etch silicon with KOH solution (10%)?

I just found 20% and higher concentration are often used .

I want to know if 10% will have a faster etching rate than 20% and if so, how
much.

Thanks.