The final thickness is 40-60A and develop within hours for 100 wafers up to
1 day for 111 wafers.


-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of Ned
Flanders
Sent: Wednesday, September 15, 2010 10:15 PM
To: General MEMS discussion
Subject: [mems-talk] native Si oxide thickness vs. time

Hi all,

say you dip a  wafer in HF/BHF for a few seconds, pull it out,
rins with DI water and start your stopwatch (t=0). How quickly will
the native oxide layer grow at nominal conditions (room temp, 1 atm)?
How thick will it be after 1 day, 1 week, 1 year... etc?

Any info would be very interesting. Thanks a lot.