I don't know if the following is well known. However, it might be useful for
someone.......

We are using a lift-off process which do not involve an additional chemical
treatment. The process is based on the photoresist series AZ 5200 from Hoechst,
which can be reverse develop i.e. transformed from a positive to a negative
resist, by a intermediate bake and flood exposure. After development in
standard developer the edges has a negative slope or overhanging lips, suitable
for lift-off. With our standard lift-off process using 1.5 um thick resist (AZ
5214E) we lift-off 500-600 nm e-beam evaporated metal.

G. F. Eriksen
Microelectronics Center
The Technical University of Denmark
DK-2800 Lyngby, Denmark

Phone: +45 4525 5768
Fax : +45 4588 7762
www : http://www.dtv.dk/dtu/institutes/mic/