Hi,

I am working on a project where I need to make aligned contacts to
randomly-distributed nanostructures a few microns across.  My leads and
alignment need to be to within about 0.25 microns, which is too small for
the contact aligner I have access too.  I can do aligned ebeam lithography,
but it seems like overkill when I don't need to push the resolution and each
alignment is only good for a single set of contacts.  I can put down Pt in
our dual-beam FIB (
http://www.fei.com/uploadedFiles/Documents/Content/2006_08_Strat400STEM_Family_S
emi_pb.pdf),
but eventually I need to make contacts out of other materials.

I am interested in exposing ebeam resist with the electron-beam in our FIB.
We don't have a dedicated add-on like one of the Raith systems (
http://www.raith.com/) but can generate patterns with the included
software.  My plan is to use a resist that requires a high dose (maybe PMMA)
and image the area that I want to expose briefly at ~2 kV, ramp the beam up
to 30 kV and expose the region.  Has anyone done anything like this before
or have any thoughts?

Thanks,

Alex