Hi all,

We are trying to dry-etch a finger electrode array (gap ~ 10um) with
molybdenum(thichkness:~100nm). SF6 is used as the process gas under the RF power
of 300W. The overwhelming majority of the unmasked Mo film could be "wiped
off"(by reacted) well. But, several spots of Mo residual(diameter:~10um, even
larger) hinder the completion of the task, leading to short-circuit ends.
Subsequent wet etching with acid-mixture of HNO3 and H3PO4 was tried to deal
with the problem but it could not work as wish. Can anyone suggest a better
alternative or suggestions to deal with the Mo residual.

Thanks a lot and best regards.

Geng Zhang