Dear All,

I was trying to etch 200nm HSQ (FOx 17: MIBK 1:2) with SF6 based ICP. I
chose this gas due to protection of material underneath. But I took me
really long-30 min-for removing only half of it. Does anyone has any
experience on this etching process? Or do you have the same problem?-because
HSQ dry etch may not be that slow.  FYI, my pressure was 10mT, room temp,
300W ICP power, 10 sccm SF6 (maybe too low?)

Thank you for your help in advance!

David