Hello,

I am fabricating a MEMS device by patterning and etching down 20um thick
device layer of a SOI wafer. Later when I try to selectively open an
area for XeF2 etch to form free standing films on unreleased devices
using a thick PR AZ 40XT-11D, features on my devices are damaged. I
suspect that the stressed thick PR damages the features during the soft
or post exposure bakes. Can anybody help with identifying the problem or
may be to suggest an alternate.

thanks,

--
Khawar