Hi Chengzhengxi,

   It is often a good idea to use about 20% v/v of CF4 with the oxygen to
etch polyimide (at least thats what I assume you mean by PI) cleanly.

-Michael

On Thu, Jul 7, 2011 at 9:39 AM, chengzhengxi wrote:

> Hi,
>
> How do I strip  off thin flim that remained after a PI  that contained
> silicon and was etched by oxygen plasma?
>
> I used some kind PI that contained Si as sacrifical layer. When i released
> the microstrure in oxygen plasma, I found that a layer of thin film remained
> on the substrate that could not be etched by oxygen plasma.
>
> Is there any way to get rid of that thin film? or strip that layer of thin
> film off by some kind of solution?
>
>                              chengzhengxi