I tried to deposit the SiN on top of SiO2/Si layers by LPCVD. There
are some Au structures (40nm thickness with 5nm Ti adhesion layer)
that are deposited by ebeam evaporator on top of SiO2 surface. My aim
is to cover the Au structures evenly. Will this be a problem? Since
our SEM is down, I cannot take SEM pictures now.

Thanks!