I think your photoresist too thick, dilute the resist. If you can get
the resist thickness  about 500nm, I don't think there is any problem.

Best regards,

 Jin Yu


-----Original Message-----
From: Xiaohui Lin [mailto:[email protected]]
Sent: 08 September 2011 17:17
To: General MEMS discussion
Subject: [mems-talk] Recipe for NR9

Hi guys I am having a difficult time dealing with NR9-1000P lithography
on glass substrate (1mm thick) coated with Cr/Au (50nm).

It is a clear field mask, so only the pattern region (5um lines) are not
exposed and developed away

spin coat thickness is 1um at 3000rpm


I found that, when exposing using MA6 Ch1 (7.5mJ) for 20s, line will be
almost closed out. But if reduce the time, the bottom may not get enough
expose.

Could anyone suggest the way to optimize the process?