isnt it a problem with such etching that the metal could redeposit on the
surface?

On Thu, Oct 13, 2011 at 4:12 AM, Kirt Williams
wrote:

> I've stripped off thin Au/Cr before with argon in an ion mill at 500 V and
> ~1 mA/cm2. You should be able to get something similar with a
> parallel-plate plasma setup. I'd start with high power, which yields a high
> voltage. Also, use a low argon pressure (say 2 mTorr), which makes the
> voltage higher and the current lower for a constant power.
>
>   --Kirt Williams
>
> -----Original Message-----
> From: [email protected] [mailto:
> [email protected]] On Behalf Of
> Yingtao Tian
> Sent: Wednesday, October 12, 2011 1:49 PM
> To: 志修 梁; General MEMSdiscussion
> Subject: Re: [mems-talk] Recipe of Ar plasma etching gold
>
> Hi,
>
> Thank you guys for replying. Actually, when I asked 'etching', I did mean
> the plasma sputter off material. Because I have other components on some
> area of the wafer, the wet etching process can damage my components. So, I
> am thinking an inert Ar plasma may be better choice to remove the 100nm Au
> and Cr.
>
> If any of you could give me something to start with, then I may be able to
> work out my own parameters more quickly.
>
> Thanks again.
>
> Yingtao