Any suggestions on how to improve photo resist (SPR-955) adhesion to LPCVD
nitride surface ?
Si < 100> with 300 nm dry thermal oxide, 200 nm LPCVD nitride (stress < 250
MPa).

We have tried HMDS vapor prime, O2 plasma +  HMDS vapor prime and H2O2
soaking + HMDS vapor prime. The spin coated resist appears to shrink from
the edge of the 150 mm wafer. Shrinkage is most and visible for the initial
few seconds after spin coating.

Without HMDS vapor prime treatment, photo resist appears normal after spin
coating. However during the develop cycle, photo resist layer appears to be
lifting off the substrate surface. Resist thickness is around 1.8 - 1.9
microns

Thanks
Piyush
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