Hi All
  I am trying to deposit a 1um silicon dioxide layer on gold to be the
dielectric insulator layer between the bottom gold electrode and the top
gold electrode.

  I tried the ebeam evaporation of silicon dioxide due to limited access to
other facilities like PECVD or sputterer.

  It turns out there are pin holes in the evaporated layer and the top gold
electrode get short connected to the bottom gold electrode.

  Any one has any experiences of doing the similar structures: gold /
dielectric  /gold ?

  I appreciate if anyone can provide useful information

  Thanks so much

                  Fei
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