We have had a lot of experience depositing low-stress silicon nitride. The
nitride is deposited at 825 C using LPCVD. In order to get low-stress, the film
is made a little silicon-rich, which results in an index of 2.2. We garauntee a
stress of less than 100 MPa (Tensile), with typical values less than 50 MPa.

We could also grow (or deposit) the oxide for you as well, although we would
need to perform a test run to get the oxidation rate on <110> wafers.

If you would be interested in using our services, or would like to discuss our
capabilities further, feel free to contact me by phone or e-mail.
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Mark D. Walters  (walters@mcnc.org)
MEMS Technology Applications Center
MCNC
Research Triangle Park, NC  27709

Phone: (919) 248-1864
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